Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDA20N50F, MOSFET

November 2013

FDA20N50F — N-Channel UniFET

FRFET

MOSFET

FDA20N50F Rev. C1

www.fairchildsemi.com

FDA20N50F

N-Channel UniFET

FRFET

MOSFET

500 V, 22 A, 260 m

Features

•R

DS(on)

= 220 m (Typ.) @ V

= 10 V, I

= 11 A

• Low Gate Charge (Typ. 50 nC)

• Low C

rss

(Typ. 27 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

• RoHS Compliant

Applications

•PDP TV

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

UniFET

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. The body diode’s reverse recovery perfor-

mance of UniFET FRFET

MOSFET has been enhanced by life-

time control. Its trr is less than 100nsec and the reverse dv/dt

immunity is 15V/ns while normal planar MOSFETs have over

200nsec and 4.5V/nsec respectively. Therefore, it can remove

additional component and improve system reliability in certain

applications in which the performance of MOSFET’s body diode

is significant. This device family is suitable for switching power

converter applications such as power factor correction (PFC),

flat panel display (FPD) TV power, ATX and electronic lamp bal-

lasts.

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDA20N50F Unit

DSS

Drain to Source Voltage 500 V

GSS

Gate to Source Voltage ±30 V

D r a i n C u r r e n t

- Continuous (T

= 25

C) 22

- Continuous (T

= 100

C) 13

D r a i n C u r r e n t - P u l s e d (Note 1) 88 A

Single Pulsed Avalanche Energy (Note 2) 1110 mJ

Avalanche Current (Note 1) 22 A

Repetitive Avalanche Energy (Note 1) 39 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

Power Dissipation

= 25

C) 388 W

- Derate above 25

C3.1W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol Parameter FDA20N50F Unit

JC

Thermal Resistance, Junction to Case, Max. 0.44

C/W

JA

Thermal Resistance, Junction to Ambient, Max. 40

TO-3PN

Summary of content (8 pages)

PAGE 1
FDA20N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 22 A, 260 m Features Description • RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 11 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET®MOSFET has been enhanced by lifetime control.
PAGE 2
Device Marking FDA20N50F Device FDA20N50F Package TO-3PN Reel Size Tube Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit ID = 250A, VGS = 0V, TJ = 25oC 500 - - V ID = 250A, Referenced to 25oC - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 80 o 10 150 C o 25 C *Notes: 1. 250s Pulse Test 1 *Notes: 1. VDS = 20V 2. 250s Pulse Test o 0.5 0.1 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS,Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 200 1.2 30s ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 100 1.1 1.0 100s 10 1ms DC 1 *Notes: 0.9 o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250A 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 10ms Operation in This Area is Limited by R DS(on) o 0.1 200 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9.
PAGE 5
FDA20N50F — N-Channel UniFETTM FRFET® MOSFET Figure 11. Gate Charge Test Circuit & Waveform IG = const. Figure 12. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2007 Fairchild Semiconductor Corporation FDA20N50F Rev. C1 5 www.fairchildsemi.
PAGE 6
FDA20N50F — N-Channel UniFETTM FRFET® MOSFET Figure 14.
PAGE 7
FDA20N50F — N-Channel UniFETTM FRFET® MOSFET Mechanical Dimensions TO-3PN 3L Figure 15. 3LD, T03, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.