Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDA59N25, MOSFET

April 2014

FDA59N25 — N-Channel UniFET

MOSFET

FDA59N25 Rev. C2

www.fairchildsemi.com

FDA59N25

N-Channel UniFET

MOSFET

250 V, 59 A, 49 mΩ

Features

•R

DS(on)

= 49 mΩ (Max.) @ V

= 10 V, I

= 29.5 A

• Low Gate Charge (Typ. 63 nC)

•Low C

rss

(Typ. 70 pF)

• 100% Avalanche Tested

•RoHS Compliant

Applications

•PDP TV

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

UniFET

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

TO-3PN

Absolute Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDA59N25 Unit

DSS

Drain to Source Voltage 250 V

DS(Avalanche)

Repetitive Avalanche Voltage (Note 1,2) 300 V

GSS

Gate to Source Voltage ±30 V

Drain Current

- Continuous (T

= 25

C) 59

- Continuous (T

= 100

C) 35

Drain Current - Pulsed (Note 1) 236 A

Single Pulsed Avalanche Energy (Note 2) 1458 mJ

Avalanche Current (Note 1) 59 A

Repetitive Avalanche Energy (Note 1) 39.2 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

Power Dissipation

= 25

C) 392 W

- Derate Above 25

C3.2W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter FDA59N25 Unit

θJC

Thermal Resistance, Junction to Case, Max. 0.32

C/WR

θCS

Thermal Resistance, Case to Sink, Typ. 0.24

θJA

Thermal Resistance, Junction to Ambient, Max. 40

Summary of content (8 pages)

PAGE 1
FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
PAGE 2
Part Number Top Mark FDA59N25 FDA59N25 Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Unit 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V Bottom : 6.0 V Top : ID, Drain Current [A] 10 2 10 ID, Drain Current [A] 2 1 10 o 150 C o 25 C 1 10 o -55 C ∝ Notes : 1. VDS = 40V 2. 250レs Pulse Test ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ 0 10 0 -1 0 10 10 1 10 10 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 ∝ Notes : 1. VGS = 0 V 2. ID = 250 レA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 ∝ Notes : 1. VGS = 10 V 2. ID = 29.5 A 0.5 0.0 -100 200 -50 0 o 150 200 Figure 10. Maximum Drain Current vs.
PAGE 5
FDA59N25 — N-Channel UniFETTM MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD VDS (t) VDD DUT 10V ID (t) tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2005 Fairchild Semiconductor Corporation FDA59N25 Rev.
PAGE 6
FDA59N25 — N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FDA59N25 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.