Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDA70N20, MOSFET

December 2013

FDA70N20 — N-Channel UniFET

MOSFET

FDA70N20 Rev C1

www.fairchildsemi.com

FDA70N20

N-Channel UniFET

MOSFET

200 V, 70 A, 35 mΩ

Features

•

DS(on)

= 35 mΩ (Max.) @ V

= 10 V, I

= 35 A

•

Low Gate Charge (Typ. 66 nC)

•Low Crss (Typ. 89 pF)

•

100% Avalanche Tested

Description

UniFET

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

Absolute Maximum Ratings

Applications

• Uninterruptible Power Supply

• AC-DC Power Supply

= 25°C unless otherwise noted.

TO-3PN

Thermal Characteristics

Symbol Parameter FDA70N20 Unit

DSS

Drain-Source Voltage 200 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

Drain Current - Pulsed

(Note 1)

280 A

GSS

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

(Note 2)

1742 mJ

Avalanche Current (Note 1) 70 A

Repetitive Avalanche Energy (Note 1) 41.7 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3) 4.5 V/ns

Power Dissipation

= 25°C)

- Derate Above 25°C

417

3.3

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter

FDA70N20

Unit

θJC

Thermal Resistance, Junction-to-Case, Max.

0.3

°C/W

θCS

Thermal Resistance, Case-to-Sink, Typ.

0.24

°C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max.

°C/W

Summary of content (8 pages)

PAGE 1
FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features Description • RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 35 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
PAGE 2
Part Number FDA70N20 Top Mark FDA70N20 Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Parameter Conditions Max. Unit Min. Typ. 200 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V Bottom : 6.0 V Top : ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 o 150 C o 1 25 C 10 o -55 C ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ 0 10 ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test 0 -1 0 10 10 1 10 10 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs.
PAGE 4
(Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.9 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 ? Notes : 1. VGS = 10 V 0.5 2. ID = 35 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o 150 200 Figure 10. Maximum Drain Current vs.
PAGE 5
FDA70N20 — N-Channel UniFETTM MOSFET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 10V 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13.
PAGE 6
FDA70N20 — N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FDA70N20 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO3, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.