Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDA8440, MOSFET

FDA8440 Rev. C1

FDA8440 N-Channel Logic Level PowerTrench

MOSFET

April 2014

FDA8440

N-Channel Logic Level PowerTrench

MOSFET

40 V, 100 A, 2.1 mΩ

Features

•R

DS(on)

= 1.46 mΩ (Typ.) @ V

= 10 V, I

= 80 A

•Q

G(tot)

= 345 nC (Typ.) @ V

= 10 V

• Low Miller Charge

•Low Q

Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• 160 A Guarantee for 2 sec

•RoHS Compliant

Application

• Power tools

• Motor drives and Uninterruptible Power Supplies

• Synchronous Rectification

• Battery Protection Circuit

TO-3PN

MOSFET Maximum Ratings

Thermal Characteristics

Symbol Parameter FDA8440 Unit

DSS

Drain to Source Voltage 40 V

GSS

Gate to Source Voltage ±20 V

Drain Current

- Continuous (T

= 155

100

- Continuous (T

= 25

C, V

= 10 V, R

θJA

= 40

C/W ) 30 A

- Pulsed 500 A

Single Pulsed Avalanche Energy (Note 1) 1682 mJ

Power dissipation 306 W

Derate above 25

C2.04W/

STG

Operating and Storage Temperature -55 to +175

θJC

Thermal Resistance, Junction to Case, Max. 0.49

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. (Note 2) 40

C/W

= 25

C unless otherwise noted.

Summary of content (8 pages)

PAGE 1
FDA8440 N-Channel Logic Level PowerTrench® MOSFET 40 V, 100 A, 2.1 mΩ Features Application • RDS(on) = 1.46 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • Power tools • QG(tot) = 345 nC (Typ.
PAGE 2
Part Number FDA8440 Top Mark FDA8440 Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 400 100 ID,Drain Current[A] ID,Drain Current[A] 100 VGS = 10.0 V 7.0 V 5.0 V 3.5 V 3.0 V 2.5 V 10 o 150 C o -55 C 10 o 25 C * Notes : 1. 250μs Pulse Test 1 * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 0.4 0.04 2. TC = 25 C 0.1 VDS,Drain-Source Voltage[V] 1 1 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6 1000 VGS = 4.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 rDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.5 0.
PAGE 5
FDA8440 N-Channel Logic Level PowerTrench® MOSFET Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2007 Fairchild Semiconductor Corporation FDA8440 Rev. C1 5 www.fairchildsemi.
PAGE 6
FDA8440 N-Channel Logic Level PowerTrench® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2007 Fairchild Semiconductor Corporation FDA8440 Rev. C1 6 www.fairchildsemi.
PAGE 7
FDA8440 N-Channel Logic Level PowerTrench® MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.