Datasheet
August 2010
FDB024N04AL7 N-Channel PowerTrench
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDB024N04AL7 Rev. A2
www.fairchildsemi.com1
FDB024N04AL7
N-Channel PowerTrench
®
MOSFET
40V, 219A, 2.4mΩ
Features
•R
DS(on)
= 2.0mΩ ( Typ.)@ V
GS
= 10V, I
D
= 80A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R
DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
D (Pin4, tab)
G
S (Pin2,3,5,6,7)
(Pin1)
FDB Series with suffix -L7
D
2
-PAK-7L
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted*
Thermal Characteristics
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 40 V
V
GSS
Gate to Source Voltage ±20 V
I
D
D r a i n C u r r e n t
- Continuous (T
C
= 25
o
C, Silicon Limited) 219*
A- Continuous (T
C
= 100
o
C, Silicon Limited) 155*
- Continuous (T
C
= 25
o
C, Package Limited) 100
I
DM
D r a in C u r r e n t - P ul s e d (Note 1) 876 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 864 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 214 W
- Derate above 25
o
C1.43W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175
o
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter Ratings Units
R
θJC
Thermal Resistance, Junction to Case 0.7
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient 62.5
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.