Datasheet
November 2013
FDB031N08 — N-Channel PowerTrench
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDB031N08 Rev. C4
www.fairchildsemi.com
1
FDB031N08
N-Channel PowerTrench
®
MOSFET
75 V, 235 A, 3.1 mΩ
Features
•R
DS(on)
= 2.4 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 75 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R
DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench
®
process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
G
S
D
D
2
-PAK
G
S
D
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDB031N08 Unit
V
DSS
Drain to Source Voltage 75 V
V
GSS
Gate to Source Voltage ±20 V
I
D
Drain Current - Continuous (T
C
= 25
o
C, Silicon Limited)
- Continuous (T
C
= 100
o
C, Silicon Limited)
- Continuous (T
C
= 25
o
C, Package Limited)
235 A
165 A
120 A
I
DM
D r a i n C u r r e n t - P u l s e d (Note 1) 940 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 1995 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 375 W
- Derate Above 25
o
C2.5W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175
o
C
T
L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter FDB031N08 Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 0.4
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. 62.5