Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDB035N10A, MOSFET

November 2013

FDB035N10A — N-Channel PowerTrench

MOSFET

FDB035N10A Rev. C2

www.fairchildsemi.com

FDB035N10A

N-Channel PowerTrench

MOSFET

100 V, 214 A, 3.5 mΩ

Features

•R

DS(on)

= 3.0 mΩ ( Typ.) @ V

= 10 V, I

= 75 A

• Fast Switching Speed

• Low Gate Charge, Q

= 89 nC ( Typ.)

• High Performance Trench Technology for Extremely Low

DS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advance PowerTrench

process that has

been tailored to minimize the on-state resistance while main-

taining superior switching performance.

Applications

• Synchronous Rectification for ATX / Server / Telecom PSU

• Battery Protection Circuit

• Motor drives and Uninterruptible Power Supplies

• Micro Solar Inverter

-PAK

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Thermal Characteristics

Symbol Parameter FDB035N10A Unit

DSS

Drain to Source Voltage 100 V

GSS

Gate to Source Voltage ±20 V

Drain Current

- Continuous (T

= 25

C, Silicon Limited) 214*

A- Continuous (T

= 100

C, Silicon Limited) 151*

- Continuous (T

= 25

C, Package Limited) 120

Drain Current - Pulsed (Note 1) 856 A

Single Pulsed Avalanche Energy (Note 2) 658 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

Power Dissipation

= 25

C) 333 W

- Derate Above 25

C2.22W/

, T

STG

Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter FDB035N10A Unit

θJC

Thermal Resistance, Junction to Case, Max. 0.45

C/W

θJA

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5

Thermal Resistance, Junction to Ambient (1 in

Pad of 2-oz Copper), Max. 40

Summary of content (9 pages)

PAGE 1
FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS(on) = 3.0 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge, QG = 89 nC ( Typ.
PAGE 2
Part Number FDB035N10A Top Mark FDB035N10A Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics 100 300 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 100 ID, Drain Current[A] ID, Drain Current[A] 600 Figure 2. Transfer Characteristics 10 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 10V 2. 250μs Pulse Test o 2 0.02 2. TC = 25 C 0.1 1 VDS, Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 3 4 5 VGS, Gate-Source Voltage[V] Figure 4.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.1 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.8 1.5 1.2 0.9 0.6 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 75A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10.
PAGE 5
FDB035N10A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics oo ZZThermal Response (t), Thermal Thermal Response C/W] θJC θJC(t), Response [ZθJC[[]C/W] Figure 12. Transient Thermal Response Curve 1 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 0.01 Single pulse 0.001 -5 10 ©2011 Fairchild Semiconductor Corporation FDB035N10A Rev. C2 t2 *Notes: o 1. ZθJC(t) = 0.45 C/W Max. 2. Duty Factor, D= t1/t2 3.
PAGE 6
FDB035N10A — N-Channel PowerTrench® MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDB035N10A Rev. C2 6 www.fairchildsemi.
PAGE 7
FDB035N10A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16.
PAGE 8
FDB035N10A — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 17. TO263 (D2PAK), Molded, 2-Lead, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.