Datasheet
December 2013
FDP075N15A / FDB075N15A — N-Channel PowerTrench
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
www.fairchildsemi.com
1
FDP075N15A / FDB075N15A
N-Channel PowerTrench
®
MOSFET
150 V, 130 A, 7.5 mΩ
Features
•R
DS(on)
= 6.25 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 100 A
•Fast Switching
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R
DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench
®
process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter
FDP075N15A_F102
FDB075N15A
Unit
V
DSS
Drain to Source Voltage 150 V
V
GSS
Gate to Source Voltage ±20 V
I
D
Drain Current
- Continuous (T
C
= 25
o
C) 130*
A
- Continuous (T
C
= 100
o
C) 92
I
DM
Drain Current - Pulsed (Note 1) 522 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 588 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 333 W
- Derate Above 25
o
C2.22W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175
o
C
T
L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter
FDP075N15A_F102
FDB075N15A
Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 0.45
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5
Thermal Resistance, Junction to Ambient, D2-PAK (1 in
2
Pad of 2-oz Copper), Max. 40
TO-220
G
D
S
G
S
D
G
S
D
D
2
-PAK
* Package limitation current is 120 A.