Datasheet
November 2013
FDB082N15A — N-Channel PowerTrench
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C2
www.fairchildsemi.com
1
FDB082N15A
N-Channel PowerTrench
®
MOSFET
150 V, 117 A, 8.2 mΩ
Features
•R
DS(on)
= 6.7 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 75 A
• Fast Switching Speed
• Low Gate Charge, Q
G
= 64.5 nC (Typ.)
• High Performance Trench Technology for Extremely Low
R
DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench
®
process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
G
S
D
D
2
-PAK
G
S
D
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDB082N15A Unit
V
DSS
Drain to Source Voltage 150 V
V
GSS
Gate to Source Voltage ±20 V
I
D
Drain Current
- Continuous (T
C
= 25
o
C, Silicon Limited) 117
A
- Continuous (T
C
= 100
o
C, Silicon Limited) 83
I
DM
Drain Current - Pulsed (Note 1) 468 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 542 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 294 W
- Derate Sbove 25
o
C1.96W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175
o
C
T
L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter FDB082N15A Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 0.51
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. 62.5