Datasheet

October 2013
FDP2532 / FDB2532 — N-Channel PowerTrench
®
MOSFET
©2002 Fairchild Semiconductor Corporation
FDP2532 / FDB2532 Rev. C2
www.fairchildsemi.com
1
FDP2532 / FDB2532
Features
Formerly developmental type 82884
Applications
TO-220
G
D
S
G
S
D
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
N-Channel PowerTrench
®
MOSFET
150 V, 79 A, 16 mΩ
R
DS(on)
= 14 mΩ ( Typ.) @ V
GS
= 10 V, I
D
= 33 A
Q
G(tot)
= 82 nC ( Typ.) @ V
GS
= 10 V
Low Miller Charge
Low Q
rr
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Consumer Appliances
Synchronous Rectification
Battery Protection Circuit
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
•
•
•
•
•
•
•
•
G
S
D
D
2
-PAK
•
•
Symbol
FDP2532 / FDB2532
r Parameter
Unit
Thermal Characteristics
V
DSS
Drain to Source Voltage 150 V
V
GS
Gate to Source Voltage ±20 V
I
D
79 A
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V) 56 A
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θJA
= 43
o
C/W) 8 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 400 mJ
P
D
Power dissipation 310 W
Derate above 25
o
C2.07
o
CW/
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
Thermal Resistance Junction to Ambient D
2
-PAK, Max. 1in
2
copper pad area
Thermal Resistance Junction to Ambient, Max. TO-220, D
2
-PAK (Note 2)
Thermal Resistance Junction to Case, Max. TO-220, D
2
-PAK
0.61
R
θJC
o
C/W
R
θJA
o
C/W
R
θJA
o
C/W
62
43