Datasheet

FDP2552 — N-Channel PowerTrench
®
MOSFET
©2002 Fairchild Semiconductor Corporation
FDP2552 Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP2552 FDP2552
TO-220
Tube N/A 50 units
Symbol Parameter Test Conditions Min Typ Max Unit
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting T
J
= 25°C, L = 7.8mH, I
AS
= 10A.
2: Pulse Width = 100s
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 150 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 120V - - 1
µA
V
GS
= 0V -T
C
= 150
o
C -250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(TH)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250µA2-4V
r
DS(ON)
Drain to Source On Resistance
I
D
= 16A, V
GS
= 10V - 0.032 0.036
I
D
= 8A, V
GS
= 6V - 0.036 0.054
I
D
= 16A, V
GS
= 10V,
T
J
= 175
o
C
- 0.084 0.097
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
- 2800 - pF
C
OSS
Output Capacitance - 285 - pF
C
RSS
Reverse Transfer Capacitance - 55 - pF
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0V to 10V
V
DD
= 75V
I
D
= 16A
I
g
= 1.0mA
39 51 nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0V to 2V - 5.2 6.8 nC
Q
gs
Gate to Source Gate Charge - 13.5 - nC
Q
gs2
Gate Charge Threshold to Plateau - 8.4 - nC
Q
gd
Gate to Drain “Miller” Charge - 8.3 - nC
t
ON
Turn-On Time
V
DD
= 75V, I
D
= 16A
V
GS
= 10V, R
GS
= 8.2
- - 62 ns
t
d(ON)
Turn-On Delay Time - 12 - ns
t
r
Rise Time - 29 - ns
t
d(OFF)
Turn-Off Delay Time - 36 - ns
t
f
Fall Time - 29 - ns
t
OFF
Turn-Off Time - - 97 ns
V
SD
Source to Drain Diode Voltage
I
SD
= 16A - - 1.25 V
I
SD
= 8A - - 1.0 V
t
rr
Reverse Recovery Time I
SD
= 16A, dI
SD
/dt = 100A/µs- -90ns
Q
RR
Reverse Recovered Charge I
SD
= 16A, dI
SD
/dt = 100A/µs - - 242 nC