Datasheet

©2012 Fairchild Semiconductor Corporation
N-Channel PowerTrench
®
MOSFET
150V, 29A, 54mΩ
Features
•r
DS(ON)
= 45mΩ (Typ.), V
GS
= 10V, I
D
= 9A
•Q
g
(tot) = 26nC (Typ.), V
GS
= 10V
• Low Miller Charge
•Low Q
RR
Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82860
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 150 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
29 A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V) 20 A
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θJA
= 43
o
C/W) 4 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 36 mJ
P
D
Power dissipation 135 W
Derate above 25
o
C0.9W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
R
θJC
o
C/W
R
θJA
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area 43
o
C/W
S
G
D
TO-263AB
FDB SERIES
GATE
SOURCE
(FLANGE)
DRAIN
FDB2572
FDB2572
Thermal Resistance Junction to Case 1.11
, TO-263 (Note 2) 62Thermal Resistance Junction to Ambient
, TO-263
January 2012
FDB2572 Rev. C