Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDB2614, MOSFET

November 2013

FDB2614 — N-Channel PowerTrench

MOSFET

FDB2614 Rev. C1

www.fairchildsemi.com

Absolute Maximum Ratings T

= 25°C unless otherwise noted

FDB2614

Features

•R

DS(on)

= 22.9 mΩ ( Typ.)@ V

= 10 V, I

= 31 A

• Low Gate Charge

• High Performance Trench technology

for

Extremely Low

DS(on)

• High Power and Current Handing Capability

General Description

This N-Channel MOSFET is producedusing Fairchild Semicon-

ductor’s advanced PowerTrench

process that has been tai-

lored to minimize the on-state resistance while maintaining

superior switching performance.

Applications

• Synchronous Rectification

• Battery Protection Circuit

• Motor Drives and Uninterruptible Power Supplies

N-Channel PowerTrench

MOSFET

200 V, 62 A, 27 mΩ

-PAK

Symbol Parameter FDB2614 Unit

Drain-Source Voltage 200 V

Gate-Source Voltage ± 30 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

39.3

Drain Current - Pulsed

(Note 1)

see Figure 9

Single Pulsed Avalanche Energy

(Note 2)

145 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation (T

= 25°C)

- Derate above 25°C

260

2.1

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Thermal Characteristics

Symbol Parameter FDB2614 Unit

θJC

Thermal Resistance, Junction-to-Case, Max. 0.48 °C/W

θJA

°C/W

θJA

62.5

°C/W

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.

Thermal Resistance, Junction to Ambient (1 in

pad of 2 oz copper), Max.

Summary of content (8 pages)

PAGE 1
FDB2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
PAGE 2
Device Marking Device Package Reel Size Tape Width Quantity FDB2614 FDB2614 D2-PAK 330 mm 24 mm 800 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 200 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1000 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 100 ID,Drain Current[A] ID,Drain Current[A] 500 10 * Notes : 1. V DS = 10V 2. 250 μ s Pulse Test 100 o 150 C 10 o -55 C * Notes : 1. 250μ s Pulse Test o 25 C o 1 0.1 2. T C = 25 C 1 V DS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 rDS(on), [Normalized] 1.1 1.0 0.9 0.8 -100 * Notes : 1. VGS = 0V 2. ID = 250 μ A -50 0 50 100 o T J, Junction Temperature [ C] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 0.0 -100 150 Figure 9. Maximum Safe Operating Area * Notes : 1. VGS = 10V 2. ID = 31A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C ] 200 Figure 10.
PAGE 5
FDB2614 — N-Channel PowerTrench® MOSFET Figure 12. Gate Charge Test Circuit & Waveform 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same T Ty ype as DU DUT T Qg 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 14.
PAGE 6
FDB2614 — N-Channel PowerTrench® MOSFET Figure 15.
PAGE 7
FDB2614 — N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-263 2L (D2PAK) Figure 16. 2LD, TO263, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.