Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDB2710, MOSFET

November 2013

FDB2710 Rev. C1

www.fairchildsemi.com

Absolute Maximum Ratings T

= 25°C unless otherwise noted

FDB2710

N-Channel PowerTrench

MOSFET

250 V, 50 A, 42.5 mΩ

Features

•R

DS(on)

= 36.3 mΩ ( Typ.)@ V

= 10 V, I

= 25 A

• Low Gate Charge

•

High Performance Trench T

echnology for Extremely Low

DS(on)

• High Power and Current Handing Capability

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s PowerTrench

process that has been tailored

to minimize the on-state resistance while maintaining superior

switching performance.

Applications

• Synchronous Rectification

•

Battery Protection Circuit

•

Motor Drives and Uninterruptible Power Supplies

-PAK

FDB2710 — N-Channel PowerTrench

MOSFET

Thermal Characteristics

Symbol Parameter

FDB2710

Unit

θJC

Thermal Resistance, Junction-to-Case, Max. 0.48 °C/W

θJA

°C/W

θJA

62.5

°C/W

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.

Thermal Resistance, Junction to Ambient (1 in

pad of 2 oz copper), Max.

Symbol Parameter FDB2710 Unit

Drain-Source Voltage 250 V

Gate-Source voltage ± 30 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

31.3

Drain Current - Pulsed

(Note 1)

See Figure 9

Single Pulsed Avalanche Energy

(Note 2)

145 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3) 4.5 V/ns

Power Dissipation (T

= 25°C)

- Derate above 25°C

260

2.1

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Summary of content (8 pages)

PAGE 1
FDB2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
PAGE 2
Device Marking FDB2710 Device Package Reel Size Tape Width Quantity FDB2710 D2-PAK 330 mm 24 mm 800 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 250 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics ID,Drain Current[A] 100 Figure 2. Transfer Characteristics 250 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 100 o 150 C ID,Drain Current[A] 500 10 o -55 C 10 o 25 C * Notes : 1. 250μs Pulse Test * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 1 0.1 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 8 VGS,Gate-Source Voltage[V] 10 Figure 4.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.2 rDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 2.5 1.1 1.0 0.9 0.8 -100 * Notes : 1. VGS = 0V 2. ID = 250μA -50 0 50 100 150 o TJ, Junction Temperature [ C] * Notes : 1. VGS = 10V 2. ID = 25A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs.
PAGE 5
FDB2710 — N-Channel PowerTrench® MOSFET Figure 12. Gate Charge Test Circuit & Waveform IG = const. Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT DUT VGS 90% 10% 10% td(on d( on)) tr t on td(o d( of f) t of offf tf Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1 5 www.fairchildsemi.
PAGE 6
FDB2710 — N-Channel PowerTrench® MOSFET Figure 15.
PAGE 7
FDB2710 — N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-263 2L (D2PAK) Figure 16. 2LD, TO263, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.