Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDB3502, MOSFET

May 2008

FDB3502 Rev.C2

www.fairchildsemi.com

FDB3502 N-Channel Power Trench

MOSFET

FDB3502

N-Channel Power Trench

MOSFET

75V, 14A, 47mΩ

Features

 Max r

DS(on)

= 47mΩ at V

= 10V, I

= 6A

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Application

 Synchronous rectifier

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 75 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25°C 14

-Continuous (Silicon limited) T

= 25°C 22

-Continuous T

= 25°C (Note 1a) 6

-Pulsed 40

Single Pulse Avalanche Energy (Note 3) 54 mJ

Power Dissipation T

= 25°C 41

Power Dissipation T

= 25°C (Note 1a) 3.1

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 3

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 40

Device Marking Device Package Reel Size Tape Width Quantity

FDB3502 FDB3502 TO-263AB 330 mm 24 mm 800 units

TO-263A

FDB Series

Summary of content (6 pages)

PAGE 1
FDB3502 tm ® N-Channel Power Trench MOSFET 75V, 14A, 47mΩ Features General Description Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 75 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 60V, 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 4.
PAGE 3
40 3.0 ID, DRAIN CURRENT (A) 35 VGS = 8V VGS = 9V 30 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 25 20 VGS = 7V 15 10 5 VGS = 6V 0 0 1 2 3 4 VGS = 6V VGS = 8V 2.0 VGS = 9V 1.5 VGS = 10V 1.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0.5 5 0 5 10 15 20 25 ID, DRAIN CURRENT(A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 35 40 1.8 1.4 1.2 1.0 0.8 -50 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 120 1.
PAGE 4
1000 VDD = 40V ID = 6A Ciss 8 VDD = 30V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 50V 6 4 100 Coss f = 1MHz VGS = 0V 2 0 0 2 4 6 8 10 Crss 10 0.1 12 1 Figure 7. Gate Charge Characteristics 25 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) TJ = 25oC TJ = 125oC 1 0.01 0.1 1 20 15 VGS = 10V Limited by Package 10 o RθJC = 3 C/W 5 0 25 10 50 125 150 Figure 10.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJc x RθJc + TC SINGLE PULSE o RθJC = 3 C/W 0.01 -5 10 -4 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 SINGLE PULSE t2 o RθJA = 62.
PAGE 6
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