Datasheet

October 2013
FDP3652 / FDB3652 — N-Channel PowerTrench
®
MOSFET
©2003 Fairchild Semiconductor Corporation
FDP3652 / FDB3652 Rev. C0
www.fairchildsemi.com
1
FDP3652 / FDB3652
•
•
•
•
Features
•
• Low Miller Charge
•
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82769
Applications
TO-220
G
D
S
G
S
D
N-Channel PowerTrench
®
MOSFET
100 V, 61 A, 16 mΩ
G
S
D
D
2
-PAK
r
DS(on)
= 14 mΩ ( Typ.), V
GS
= 10 V, I
D
= 61 A
Q
g(tot)
= 41 nC ( Typ.), V
GS
= 10 V
Low Q
RR
Body
Diode
•
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter
FDP3652 / FDB3652 Unit
V
DSS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
61 A
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V) 43 A
Continuous (T
amb
= 25
o
C, V
GS
= 10V) with R
θJA
= 43
o
C/W) 9 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 182 mJ
P
D
Power dissipation 150 W
Derate above 25
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
R
θJC
Thermal Resistance Junction to Case TO-220, D
2
-PAK
1.0
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-220, D
2
-PAK (Note 2)
62
o
C/W
R
θJA
Thermal Resistance Junction to Ambient D
2
-PAK, 1in
2
copper pad area
43
o
C/W
1.0
W/
o
C