Datasheet

November 2013
FDB5800
N-Channel Logic Level PowerTrench
®
MOSFET
60 V, 80 A, 6 mΩ
Features
FDB5800 N-Channel Logic Level PowerTrench
®
MOSFET
©2005 Fairchild Semiconductor Corporation
FDB5800 Rev. C2
www.fairchildsemi.com
1
Description
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
•R
DS(on)
= 4.6 m (Typ.), V
GS
= 10 V, I
D
= 80 A
High Performance Trench Technology for Extermly
Low R
DS(on)
Low Gate Charge
High Power and Current Handing Capability
•RoHs Compliant
G
S
D
D
2
-PAK
G
S
D
copper pad area
Thermal Resistance Junction to Ambient TO-263, Max. ( Note 2)
Thermal Resistance Junction to Case TO-263, Max.
UnitFDB5800
Symbol Parameter
V
DSS
Drain to Source Voltage 60 V
V
GS
Gate to Source Voltage ±20 V
I
D
80 A
Drain Current
- Continuous (T
C
< 102
o
C, V
GS
= 10 V)
- Continuous (T
C
< 90
o
C, V
GS
= 5 V)
80 A
- Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θJA
= 43
o
C/W)
14 A
- Pulsed
Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1)
652 mJ
P
D
- Power Dissipation
242 W
- Derate above 25
o
C
1.61 W/
o
C
T
J
, T
STG
- Operating and Storage Temperature
-55 to 175
o
C
Thermal Characteristics
R
θJC
0.62
o
C/W
R
θJA
62.5
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-263, 1in
2
43
o
C/W
Applications
Power tools
Motor drives and Uninterruptible Power Supplies
This N-Channel MOSFET is
produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process
that has been tailored to minimize the on-state
resistance while maintaining superior switching
performance.

Summary of content (7 pages)