Datasheet
2012 Fairchild Semiconductor Corporation
FDP8030L/FDB8030L Rev C2(W)
FDP8030L/FDB8030L
N-Channel Logic Level PowerTrench
MOSFET
General Description
This N-Channel Logic level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETS feature faster switching and lower
gate charge than other MOSFETS with comparable
R
DS(on)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
•
80 A, 30 V. R
DS(ON)
= 0.0035
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.0045
Ω
@ V
GS
= 4.5 V
•
Critical DC electrical parameters specified at
elevated temperature
•
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor
•
High performance trench technology for extremely
low R
DS(ON)
•
175
°
C maximum junction temperature rating
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±
20
V
I
D
Drain Current – Continuous
(Note 1)
80 A
– Pulsed
(Note 1)
300
P
D
Total Power Dissipation @ T
C
= 25
°
C
187 W
Derate above 25
°
C
1.25
W
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range -65 to +175
°
C
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
275
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case 0.8
°
C/W
R
θ
JA
Thermal Resistance, Junction-to-Ambient 62.5
°
C/W
FDP8030L/FDB8030L
May 2013