FDB8441 N-Channel PowerTrench® MOSFET 40V, 120A, 2.5mΩ Applications Typ rDS(on) = 1.
Symbol VDS Drain to Source Voltage Parameter Ratings 40 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (TC = 25oC, Silicon limited) 262* Drain Current Continuous (TC = 100oC, Silicon limited) 185* Drain Current Continuous (TC = 25oC, Package limited) ID 120 Drain Current Continuous (TA = 25oC, RθJA = 43oC/W) Pulsed EAS PD TJ, TSTG A 28 See Figure 4 Single Pulse Avalanche Energy (Note 1) 947 Power dissipation Derate above 25oC Operating and Storage Temperature mJ 3
Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 77 ns td(on) Turn-On Delay Time - 23 - ns tr Turn-On Rise Time - 24 - ns td(off) Turn-Off Delay Time - 75 - ns tf Turn-Off Fall Time - 17.9 - ns toff Turn-Off Time - - 147 ns VDD = 20V, ID = 35A VGS = 10V, RGS = 1.5Ω Drain-Source Diode Characteristics ISD = 35A - 0.8 1.25 V ISD = 15A - 0.8 1.
300 1.0 250 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) NORMALIZED THERMAL IMPEDANCE, ZθJC 150 100 CURRENT LIMITED BY PACKAGE 50 0 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 VGS = 10V 200 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.
4000 ID, DRAIN CURRENT (A) 1000 IAS, AVALANCHE CURRENT (A) 500 10us If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 100 10 LIMITED BY PACKAGE 1ms 1 0.1 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) T = 25oC C 1 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 100 0.
1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250μA 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 10000 Coss Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 1.00 0.95 0.90 -80 -40 0 40 80 120 160 200 10 ID = 80A VDD = 15V 8 VDD = 25V 6 VDD = 20V 4 2 0 0 50 100 150 200 250 Qg, GATE CHARGE(nC) Figure 13.
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