Datasheet

February 2007
FDB8447L 40V N-Channel PowerTrench
®
MOSFET
©2007 Fairchild Semiconductor Corporation
FDB8447L Rev.C
www.fairchildsemi.com
1
FDB8447L
40V N-Channel PowerTrench
®
MOSFET
40V, 50A, 8.5m
Features
Max r
DS(on)
= 8.5m at V
GS
= 10V, I
D
= 14A
Max r
DS(on)
= 11m at V
GS
= 4.5V, I
D
= 11A
Fast Switching
RoHS Compliant
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
®
technology to
deliver low
r
DS(on)
and optimized BV
DSS
capability to offer
superior performance benefit in the application.
Application
Inverter
Power Supplies
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25°C 50
A
-Continuous (Silicon limited) T
C
= 25°C (Note 1) 66
-Continuous T
A
= 25°C (Note 1a) 15
-Pulsed 100
E
AS
Drain-Source Avalanche Energy (Note 3) 153 mJ
P
D
Power Dissipation T
C
= 25°C 60
W
Power Dissipation (Note 1a) 3.1
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case (Note 1) 2.1
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDB8447L FDB8447L TO-263AB 330mm 24mm 800 units
D
G
S
D
G
S
TO-263AB
FDB Series

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