Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDB86135, MOSFET

FDB86135 N-Channel Shielded Gate PowerTrench

MOSFET

FDB86135 Rev. C1

www.fairchildsemi.com1

May 2013

FDB86135

N-Channel Shielded Gate PowerTrench

MOSFET

100V, 176A, 3.5mΩ

Features

• Shielded Gate MOSFET Technology

•Max R

DS(on)

= 3.5mΩ at V

= 10V, I

= 75A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

DS(on)

• High Power and Current Handling Capability

• RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench

process that

incorporates Shielded Gate technology. This process has been

optimized for the on-state resistance and yet maintain superior

switching performance.

Applications

• DC-DC primary bridge

• DC-DC Synchronous rectification

• Hot swap

-PAK

FDB Series

MOSFET Maximum Ratings T

= 25

C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

DSS

Drain to Source Voltage 100 V

GSS

Gate to Source Voltage ±20 V

Drain Curren - Continuous (Silicon Limited) T

= 25

C 176

A - Continuous( Package Limited) T

= 25

C 120

- Continuous T

= 25

C(Note 1a) 75

- Pulsed 704 A

Single Pulsed Avalanche Energy (Note 3) 658 mJ

Power Dissipation

- T

= 25

C (Note 1a) 227 W

- T

= 25

C (Note 1b) 2.4 W/

, T

STG

Operating and Storage Temperature Range -55 to +175

Symbol Parameter Ratings Units

θJC

Thermal Resistance, Junction to Case (Note 1) 0.66

C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 62.5

Device Marking Device Package Reel Size Tape Width Quantity

FDB86135 FDB86135 D2-PAK 330mm 24mm 800

Summary of content (9 pages)

PAGE 1
FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. • Max RDS(on) = 3.
PAGE 2
Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V - 0.07 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250μA, VGS = 0V, TC = 25oC VDS = 80V, VGS = 0V - - 1 μA IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA ID = 250μA, Referenced to 25oC On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 - 4.
PAGE 3
Figure 1. On-Region Characteristics 100 300 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 100 ID, Drain Current[A] ID, Drain Current[A] 600 Figure 2. Transfer Characteristics 10 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 10V 2. 250μs Pulse Test o 2. TC = 25 C 2 0.02 1 0.1 1 VDS, Drain-Source Voltage[V] 10 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 VGS, Gate-Source Voltage[V] Figure 4.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.1 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.8 1.5 1.2 0.9 0.6 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 75A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10.
PAGE 5
Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 3 1 0 .5 0 .1 0 .2 0 .0 1 0 .0 5 t1 0 .0 2 0 .0 1 *N o te s : t2 o 1 . Z θ J C (t) = 0 .6 6 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) S in g le p u ls e 0 .0 0 1 -5 10 FDB86135 Rev. C1 PDM 0 .1 10 -4 -3 -2 -1 10 10 10 R e c ta n g u la r P u ls e D u r a tio n [s e c ] 5 1 10 www.fairchildsemi.
PAGE 6
FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB86135 Rev. C1 6 www.fairchildsemi.
PAGE 7
FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDB86135 Rev. C1 7 www.
PAGE 8
FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET Mechanical Dimensions D2-PAK 10.67 9.65 -A- 12.70 1.68 1.00 4 9.45 9.65 8.38 10.00 (6.40) 1.78 MAX 2 1 3.80 3 1.05 1.78 1.14 0.99 0.51 (2.12) 5.08 5.08 0.25 B M LAND PATTERN RECOMMENDATION UNLESS NOTED, ALL DIMS TYPICAL AM -B6.22 MIN 4.83 4.06 1.65 1.14 4 6.86 MIN 15.88 14.61 SEE DETAIL A 2 3 1 NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO-263, VARIATION AB.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.