Datasheet

©2008 Fairchild Semiconductor Corporation FDB8870 Rev. A3
FDB8870
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics T
C
= 25°C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
1.4
-80 -40 0 40 80 120 160 200
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
T
J
, JUNCTION TEMPERATURE (
o
C)
THRESHOLD VOLTAGE
0.9
1.0
1.1
1.2
-80 -40 0 40 80 120 160 200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
I
D
= 250µA
BREAKDOWN VOLTAGE
1000
10000
0.1 1 10
30
400
C, CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
OSS
≅ C
DS
+ C
GD
C
RSS
= C
GD
0
2
4
6
8
10
0 20406080100
V
GS
, GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 35A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER: