Datasheet

©2008 Fairchild Semiconductor Corporation FDB8896 Rev. B2
FDB8896
FDB8896
N-Channel PowerTrench
®
MOSFET
30V, 93A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Applications
• DC/DC converters
Features
•r
DS(ON)
= 5.7mΩ, V
GS
= 10V, I
D
= 35A
•r
DS(ON)
= 6.8mΩ, V
GS
= 4.5V, I
D
= 35A
• High performance trench technology for extremely low
r
DS(ON)
• Low gate charge
• High power and current handling capability
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
93 A
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V) (Note 1) 85 A
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θJA
= 43
o
C/W) 19 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 2) 74 mJ
P
D
Power dissipation 80 W
Derate above 25
o
C0.53W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
R
θJC
Thermal Resistance Junction to Case TO-263 1.88
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-263 ( Note 3) 62
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area 43
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDB8896 FDB8896 TO-263AB 330mm 24mm 800 units
D
G
S
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
tm
May 2008