Datasheet

FDB9403_F085 N-Channel Power Trench
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDB9403_F085_F085 Rev. C1
www.fairchildsemi.com1
FDB9403_F085
N-Channel Power Trench
®
MOSFET
40V, 110A, 1.2mΩ
Features
 Typ r
DS(on)
= 1mΩ at V
GS
= 10V, I
D
= 80A
 Typ Q
g(tot)
= 164nC at V
GS
= 10V, I
D
= 80A
 UIS Capability
 RoHS Compliant
 Qualified to AEC Q101
Applications
 Automotive Engine Control
 Powertrain Management
 Solenoid and Motor Drivers
 Electronic Steering
 Integrated Starter/alternator
 Distributed Power Architectures and VRM
 Primary Switch for 12V Systems
MOSFET Maximum Ratings T
J
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current - Continuous (V
GS
=10) (Note 1) T
C
= 25°C 110
A
Pulsed Drain Current T
C
= 25°C See Figure4
E
AS
Single Pulse Avalanche Energy (Note 2) 968 mJ
P
D
Power Dissipation 333 W
Derate above 25
o
C2.22W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to + 175
o
C
R
θJC
Thermal Resistance Junction to Case 0.45
o
C/W
R
θJA
Maximum Thermal Resistance Junction to Ambient (Note 3) 43
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB9403 FDB9403_F085 TO-263AB 330mm 24mm 800 units
Notes:
1. Current is limited by bondwire configuration. Please see Fairchild AN 9757-1 for details on test method.
2: Starting T
J
= 25°C, L = 0.47mH, I
AS
= 64A, V
DD
= 40V during inductor charging and V
DD
= 0V during time in avalanche.
3:
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins.
R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design. The maximum rating
presented here is based on mounting on a 1 in
2
pad of 2oz copper.
G
S
D
D
G
S
TO-263AB
FDB SERIES
Aug
2012