Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC2512, MOSFET

October 2009

2009 Fairchild Semiconductor Corporation

FDC2512 Rev B4 (W)

FDC2512

150V N-Channel PowerTrench







MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R

DS(ON)

and fast switching speed.

Applications

• DC/DC converter

Features

• 1.4 A, 150 V. R

DS(ON)

= 425 mΩ @ V

= 10 V

DS(ON)

= 475 mΩ @ V

= 6 V

• High performance trench technology for extremely

low R

DS(ON)

• Low gate charge (8nC typ)

• High power and current handling capability

• Fast switching speed

SuperSOT -6

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 150 V

GSS

Gate-Source Voltage

± 20

Drain Current – Continuous (Note 1a) 1.4

– Pulsed 8

Maximum Power Dissipation (Note 1a) 1.6 W P

(Note 1b)

0.8

, T

stg

Operating and Storage Junction Temperature Range

−55 to +150 °C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 78

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 30

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.252 FDC2512 7’’ 8mm 3000 units

FDC2512

Single Pulse Avalanche Energy

13.5 mJ

(Note 3)

Summary of content (5 pages)

PAGE 1
FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 1.4 A, 150 V.
PAGE 2
Symbl TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA 150 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, VDS = 120 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA 4 V On Characteristics ID = 250 µA, Referenced to 25°C 147 mV/°C
PAGE 3
FDC2512 Typical Characteristics VGS = 10V 4.5V 6.0V ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 6 4.0V 4 2 1.3 VGS = 4.0V 1.2 4.5V 1.1 0 10V 1 2 4 6 0 8 1 2 3 4 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.2 0.8 ID = 1.4A VGS =10V ID = 0.7A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 0.
PAGE 4
FDC2512 Typical Characteristics 500 ID = 1.4A VDS = 50V f = 1MHz VGS = 0 V 75V 8 400 100V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 300 200 100 COSS CRSS 0 0 0 1 2 3 4 5 6 7 8 9 0 25 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 75 125 150 40 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100µs 1ms 1 10ms 100ms 0.1 DC 1s VGS = 10V SINGLE PULSE RθJA = 156oC/W 0.01 TA = 25oC 0.001 0.
PAGE 5
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