Datasheet

February 2002
2002 Fairchild Semiconductor Corporation
FDC2612 Rev B3 (W)
FDC2612
200V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Applications
DC/DC converter
Features
1.1 A, 200 V. R
DS(ON)
= 725 m @ V
GS
= 10 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching speed
Low gate charge (8nC typical)
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 200 V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current – Continuous (Note 1a) 1.1 A
Pulsed 4
Maximum Power Dissipation (Note 1a) 1.6 W P
D
(Note 1b)
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 30
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.262 FDC2612 7’’ 8mm 3000 units
FDC2612

Summary of content (5 pages)