Datasheet
February 2002
2002 Fairchild Semiconductor Corporation
FDC3512 Rev B2 (W)
FDC3512
80V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Applications
• DC/DC converter
Features
• 3.0 A, 80 V R
DS(ON)
= 77 mΩ @ V
GS
= 10 V
R
DS(ON)
= 88 mΩ @ V
GS
= 6 V
• High performance trench technology for extremely
low R
DS(ON)
• Low gate charge (13nC typ)
• High power and current handling capability
• Fast switching speed
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 80 V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current – Continuous (Note 1a) 3.0 A
– Pulsed 20
Maximum Power Dissipation (Note 1a) 1.6 W
P
D
(Note 1b)
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 30
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.352 FDC3512 7’’ 8mm 3000 units
FDC3512