Datasheet
June 2010
©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C
www.fairchildsemi.com
1
FDC3535 P-Channel Power Trench
®
MOSFET
FDC3535
P-Channel Power Trench
®
MOSFET
-80 V, -2.1 A, 183 mΩ
Features
Max r
DS(on)
= 183 mΩ at V
GS
= -10 V, I
D
= -2.1 A
Max r
DS(on)
= 233 mΩ at V
GS
= -4.5 V, I
D
= -1.9 A
High performance trench technology for extremely low r
DS(on)
High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
®
process that has
been optimized for r
DS(on)
, switching performance and
ruggedness.
Applications
Load Switch
Synchronous Rectifier
SuperSOT
TM
-6
G
S
D
D
D
D
Pin 1
1
2
3
6
5
4
D
D
G
D
D
S
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -80 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Note 1a) -2.1
A
-Pulsed -10
E
AS
Single Pulse Avalanche Energy (Note 3) 37 mJ
P
D
Power Dissipation (Note 1a) 1.6
W
Power Dissipation (Note 1b) 0.7
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 30
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 78
Device Marking Device Package Reel Size Tape Width Quantity
.535 FDC3535 SSOT-6 7 ’’ 8 mm 3000 units