Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC3601N, MOSFET

August 2001

2001 Fairchild Semiconductor Corporation

FDC3601N Rev C(W)

FDC3601N

Dual N-Channel 100V Specified PowerTrench



MOSFET

General Description

These N-Channel 100V specified MOSFETs are

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain low

gate charge for superior switching performance.

These devices have been designed to offer exceptional

power dissipation in a very small footprint for

applications where the bigger more expensive SO-8

and TSSOP-8 packages are impractical.

Applications

• Load switch

• Battery protection

• Power management

Features

•

1.0 A, 100 V. R

DS(ON)

= 500 mΩ @ V

= 10 V

DS(ON)

= 550 mΩ @ V

= 6.0 V

• Low gate charge (3.7nC typical)

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(ON) .

• SuperSOT

-6 package: small footprint 72%

(smaller than standard SO-8); low profile (1mm thick).

SuperSOT -6

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 100 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) 1.0 A

– Pulsed 4.0

Power Dissipation for Single Operation (Note 1a) 0.96

(Note 1b)

0.9

(Note 1c)

0.7

, T

STG

Operating and Storage Junction Temperature Range

−55 to +150 °C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 130

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 60

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.601 FDC3601N 7’’ 8mm 3000 units

FDC3601N

Summary of content (5 pages)

PAGE 1
FDC3601N Dual N-Channel 100V Specified PowerTrenchMOSFET Features • 1.0 A, 100 V. General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V • Low gate charge (3.7nC typical) • Fast switching speed.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA 100 V BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA,Referenced to 25°C VDS = 80 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA 4 V On Characteristics 105 mV/°C
PAGE 3
FDC3601N Typical Characteristics 1.6 4 VGS = 10V ID, DRAIN CURRENT (A) 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5.0V 4.5V 3 4.0V 2 1 VGS = 4.0V 1.4 4.5V 1.2 5.0V 6.0V 10V 1 0.8 0 0 2 4 6 0 8 1 Figure 1. On-Region Characteristics. 3 4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.25 2.6 ID = 1.0A VGS =10V 2.2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.
PAGE 4
FDC3601N Typical Characteristics 200 VDS = 30V ID = 1.0A 70V 6 4 150 100 50 2 COSS CRSS 0 0 0 1 2 3 4 0 10 Qg, GATE CHARGE (nC) 30 40 50 Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 10 100µs RDS(ON) LIMIT 1ms 1 10ms 100ms 1s DC 0.1 VGS = 10V SINGLE PULSE RθJA = 180oC/W 0.01 TA = 25oC 0.001 0.1 1 10 100 SINGLE PULSE RθJA = 180°C/W TA = 25°C 40 30 20 10 0 0.001 1000 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.
PAGE 5
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