Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC365P, MOSFET

November 2007

FDC365P Rev.C

www.fairchildsemi.com

FDC365P P-Channel PowerTrench

MOSFET

FDC365P

P-Channel PowerTrench

MOSFET

-35V, -4.3A, 55mΩ

Features

 Max r

DS(on)

= 55mΩ at V

= -10V, I

= -4.2A

 Max r

DS(on)

= 80mΩ at V

= -4.5V, I

= -3.2A

 RoHS Compliant

General Description

This P-Channel MOSFET has been produced using Fairchild

Semiconductor’s proprietary PowerTrench

technology to

deliver low

DS(on)

and optimized Bvdss capability to offer

superior performance benefit in the applications.

Applications

 Inverter

 Power Supplies

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage -35 V

Gate to Source Voltage ±20 V

-Continuous (Note 1a) -4.3

-Pulsed -20

Power Dissipation (Note 1a) 1.6

Power Dissipation (Note 1b) 0.8

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 156

Device Marking Device Package Reel Size Tape Width Quantity

.365P FDC365P SSOT6 7’’ 8mm 3000 units

SuperSOT

-6

Pin 1

Summary of content (6 pages)

PAGE 1
FDC365P tm P-Channel PowerTrench® MOSFET -35V, -4.3A, 55mΩ Features General Description Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient -35 V ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -28V, VGS = 0V -1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA -3 V -26 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ∆VGS(th) ∆TJ Gate to Source
PAGE 3
4.0 VGS = -10V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 16 VGS = -4.5V VGS = -4V 12 8 VGS = -3.5V 4 VGS = -3V 0 0 1 2 3 4 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 VGS = -3V 3.0 VGS = -3.5V 2.5 VGS = -4V 2.0 VGS = -4.5V 1.5 1.0 VGS = -10V 0.5 5 0 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 20 200 ID = - 4.2A VGS = -10V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.
PAGE 4
1000 ID = -4.2A 8 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -20V 6 VDD = -25V VDD = -15V 4 Ciss Coss 100 2 f = 1MHz VGS = 0V 30 0.1 0 0 3 6 9 12 1 35 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 30 P(PK), PEAK TRANSIENT POWER (W) 400 10 -ID, DRAIN CURRENT (A) Crss 0.
PAGE 5
FDC365P P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 5 www.fairchildsemi.
PAGE 6
Preliminary Datasheet The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.