Datasheet

FDC5612
FDC5612 Rev. C2
FDC5612
60V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
December 2004
©2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 60 V
V
GSS
Gate-Source Voltage
±
20
V
I
D
Drain Current - Continuous
(Note 1a)
4.3 A
Drain Current - Pulsed 20
P
D
Power Dissipation for Single Operation
(Note 1a)
1.6 W
(Note 1b)
0.8
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°
C/W
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.562 FDC5612 7 8mm 3000 units
Features
4.3 A, 60 V. R
DS(ON)
= 0.055 @ V
GS
= 10 V
R
DS(ON)
= 0.064
@ V
GS
= 6 V
Low gate charge (12.5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
5
6
4
1
2
3
SuperSOT
TM
-6
S
D
D
D
D
G

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