Datasheet

February 2002
2002 Fairchild Semiconductor Corporation
FDC5614P Rev C1 (W)
FDC5614P
60V P-Channel Logic Level PowerTrench


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MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• DC-DC converters
• Load switch
• Power management
Features
• –3 A, –60 V. R
DS(ON)
= 0.105 Ω @ V
GS
= –10 V
R
DS(ON)
= 0.135 Ω @ V
GS
= –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –60 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous (Note 1a) –3 A
– Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 W P
D
(Note 1b)
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 30
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.564 FDC5614P 7’’ 8mm 3000 units
FDC5614P