FDC5661N_F085 ® N-Channel Logic Level PowerTrench MOSFET tm 60V, 4A, 60mΩ Features Applications RDS(on) = 47mΩ at VGS = 10V, ID = 4.3A DC/DC converter RDS(on) = 60mΩ at VGS = 4.5V, ID = 4A Motor Drives Typ Qg(TOT) = 14.5nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant ©2008 Fairchild Semiconductor Corporation FDC5661N_F085 Rev. A 1 www.fairchildsemi.
Symbol Drain to Source Voltage VDSS VGS ID PD Parameter Ratings 60 Units V Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V) 4.3 Pulsed 20 Power Dissipation TJ, TSTG Operating and Storage Temperature A 1.6 W -55 to +150 oC Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 30 o 78 oC/W C/W Package Marking and Ordering Information Device Marking .
Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 17.6 ns td(on) Turn-On Delay Time - 7.2 - ns tr Rise Time - 1.6 - ns td(off) Turn-Off Delay Time - 19.3 - ns tf Fall Time - 3.1 - ns toff Turn-Off Time - - 36 ns ISD = 4.3A - 0.8 1.25 ISD = 2.1A - 0.8 1.0 VDD = 30V, ID = 4.
5 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 4 3 VGS = 10V 2 VGS = 4.5V 1 o RθJA = 78 C/W 0.0 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 25 150 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 150 Figure 2. Maximum Continuous Drain Current vs Ambient Temperature Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.
20 10us 10 100us 1 1ms 10ms 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 0.01 SINGLE PULSE TJ = MAX RATED o TA = 25 C 100ms 1s DC PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 VDD = 5V 12 TJ = 150oC 8 4 0 0.1 1 10 100 300 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 120 20 ID = 4.3A PULSE DURATION = 80μs DUTY CYCLE = 0.
1.15 2000 CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250μA 1.10 1.05 1.00 Ciss 1000 Coss 100 Crss 0.95 0.90 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 10 0.1 160 Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 12. Capacitance vs Drain to Source Voltage VGS, GATE TO SOURCE VOLTAGE(V) Figure 14. 10 ID = 4.
FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW
