Datasheet
April 2001
2001 Fairchild Semiconductor Corporation FDC602P Rev C(W)
FDC602P
P-Channel 2.5V PowerTrench
Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
• Battery management
• Load switch
• Battery protection
Features
• –5.5 A, –20 V R
DS(ON)
= 35 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 50 mΩ @ V
GS
= –2.5 V
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage
±12
V
I
D
Drain Current – Continuous (Note 1a) –5.5 A
– Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 W P
D
(Note 1b)
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 30
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.602 FDC602P 7’’ 8mm 3000 units
FDC602P