Datasheet

January 2001
2001 Fairchild Semiconductor Corporation
FDC604P Rev C (W)
FDC604P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
Battery management
Load switch
Battery protection
Features
–5.5 A, –20 V. R
DS(ON)
= 33 m @ V
GS
= –4.5 V
R
DS(ON)
= 43 m @ V
GS
= –2.5 V
R
DS(ON)
= 60 m @ V
GS
= –1.8 V
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage
±8
V
I
D
Drain Current – Continuous (Note 1a) –5.5 A
– Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 WP
D
(Note 1b)
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 30
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.604 FDC604P 7’’ 8mm 3000 units
FDC604P

Summary of content (5 pages)