Datasheet

December 2001
2001 Fairchild Semiconductor Corporation
FDC606P Rev E (W)
FDC606P
P-Channel 1.8V Specified PowerTrench



MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –6 A, –12 V. R
DS(ON)
= 26 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 35 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 53 mΩ @ V
GS
= –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –12 V
V
GSS
Gate-Source Voltage
±8
V
I
D
Drain Current – Continuous (Note 1a) –6 A
– Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 W P
D
(Note 1b)
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 30
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.606 FDC606P 7’’ 8mm 3000 units
FDC606P