Datasheet

©2006 Fairchild Semiconductor Corporation
FDC608PZ Rev B (W)
FDC608PZ
P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for battery power
applications: load switching and power management,
battery power circuits, and DC/DC conversions.
Features
• –5.8 A, –20 V. R
DS(ON)
= 30 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 43 mΩ @ V
GS
= –2.5 V
• Low Gate Charge
• High performance trench technology for extremely
low R
DS(ON)
• SuperSOT
TM
–6 package: small footprint (72%
smaller than standard SO
–8) low profile (1mm thick).
D
D
D
S
D
G
SuperSOT -6
TM
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage
±12
V
Drain Current – Continuous (Note 1a) –5.8 I
D
– Pulsed –20
A
Maximum Power Dissipation (Note 1a) 1.6 P
D
(Note 1b)
0.8
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 30
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.608Z FDC608PZ 7’’ 8mm 3000 units
6
5
4
1
2
3
FDC608PZ
tm
June 2006