Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC610PZ, MOSFET

August 2007

FDC610PZ P-Channel PowerTrench

MOSFET

FDC610PZ Rev.B

www.fairchildsemi.com

FDC610PZ

P-Channel PowerTrench

MOSFET

–30V, –4.9A, 42mΩ

Features

 Max r

DS(on)

= 42mΩ at V

= –10V, I

= –4.9A

 Max r

DS(on)

= 75mΩ at V

= –4.5V, I

= –3.7A

 Low gate charge (17nC typical).

 High performance trench technology for extremely low r

DS(on).

 SuperSOT

–6 package: small footprint (72% smaller than

standard SO–8) low profile (1mm thick).

 RoHS Compliant

General Description

This P-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench

process that has

been especially tailored to minimize the on-state resistance and

yet maintain low gate charge for superior switching performance.

These devices are well suited for battery power applications:

load switching and power management, battery charging

circuits, and DC/DC conversion.

Application

 DC - DC Conversion

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage –30 V

Gate to Source Voltage ±25 V

Drain Current -Continuous (Note 1a) –4.9

-Pulsed –20

Power Dissipation (Note 1a) 1.6

Power Dissipation (Note 1b) 0.8

, T

STG

Operating and Storage Junction Temperature Range –55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 156

Device Marking Device Package Reel Size Tape Width Quantity

.610Z FDC610PZ SSOT6 7’’ 8mm 3000units

SuperSOT

-6

Pin 1

Summary of content (6 pages)

PAGE 1
FDC610PZ tm P-Channel PowerTrench® MOSFET –30V, –4.9A, 42mΩ Features General Description Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient –30 V ID = –250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –24V, VGS = 0V –1 µA IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 µA –3 V –22 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250µA ∆VGS(th) ∆TJ Gate to Source T
PAGE 3
5.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 -ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -10V 15 VGS = -5V VGS = -4.5V 10 VGS = -4V 5 VGS = -3.5V 0 0 1 2 3 4.5 4.0 VGS = -4V 3.5 3.0 VGS = -4.5V 2.5 2.0 VGS = -5V 1.5 1.0 0.5 4 VGS = -10V 0 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.
PAGE 4
2000 ID = -4.9A Ciss 1000 8 VDD = -10V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -15V 6 VDD = -20V 4 2 Coss Crss 100 0 0 4 8 12 16 50 0.1 20 Figure 7. Gate Charge Characteristics 10 30 Figure 8.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 156 C/W 1E-3 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDC610PZ Rev.B 5 www.fairchildsemi.
PAGE 6
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