Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC6305N, MOSFET

FDC6305N

FDC6305N, Rev. C

FDC6305N

Dual N-Channel 2.5V Specified PowerTrench

MOSFET

General Description

These N-Channel low threshold 2.5V specified

MOSFETs are produced using Fairchild Semiconductor's

advanced PowerTrench process that has been

especially tailored to minimize on-state resistance and

yet maintain low gate charge for superior switching

performance.

Applications

• Load switch

• DC/DC converter

• Motor driving

Features

• 2.7 A, 20 V. R

DS(ON)

= 0.08 Ω @ V

= 4.5 V

DS(ON)

= 0.12 Ω @ V

= 2.5 V

• Low gate charge (3.5nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(ON)

• SuperSOT

-6 package: small footprint (72% smaller

than standard SO-8); low profile (1mm thick).

1999 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 20 V

GSS

Gate-Source Voltage

Drain Current - Continuous

(Note 1a)

2.7 A

- Pulsed 8

Power Dissipation for Single Operation

(Note 1a)

0.96 W

(Note 1b)

0.9

(Note 1c)

0.7

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

130

C/W

Thermal Resistance, Junction-to-Case

(Note 1)

C/W

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.305 FDC6305N 7’’ 8mm 3000 units

March 1999

SuperSOT -6

Summary of content (5 pages)

PAGE 1
FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. • Applications • Load switch • DC/DC converter • Motor driving 2.7 A, 20 V. RDS(ON) = 0.08 Ω @ VGS = 4.5 V RDS(ON) = 0.12 Ω @ VGS = 2.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA 1.
PAGE 3
FDC6305N Typical Characteristics 10 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.0V 3.5V ID, DRAIN CURRENT (A) 8 2.5V 6 2.0V 4 2 1.5V 0 1.4 VGS = 2.5V 3.0V 1.2 3.5V 4.0V 4.5V 1 0.8 0 0.5 1 1.5 2 2.5 3 0 2 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.24 1.6 ID = 2.7A VGS = 4.5V ID = 1.
PAGE 4
(continued) 5 500 ID = 2.7A f = 1MHz VGS = 0 V VDS = 5V 4 400 10V 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDC6305N Typical Characteristics 3 2 CISS 300 200 1 100 0 0 COSS CRSS 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4 Qg, GATE CHARGE (nC) 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.
PAGE 5
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