Datasheet

April 2001
2001 Fairchild Semiconductor Corporation FDC6310P Rev C(W)
FDC6310P
Dual P-Channel 2.5V Specified PowerTrench

MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
• Load switch
• Battery protection
• Power management
Features
• –2.2 A, –20 V. R
DS(ON)
= 125 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 190 mΩ @ V
GS
= –2.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• SuperSOT TM -6 package: small footprint 72%
smaller than standard SO-8); low profile (1mm thick)
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
3
2
1
4
5
6
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage ±12 V
I
D
Drain Current – Continuous (Note 1a) –2.2 A
– Pulsed –6
Power Dissipation for Single Operation (Note 1a) 0.96
(Note 1b)
0.9
P
D
(Note 1c)
0.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 130
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 60
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.310 FDC6310P 7’’ 8mm 3000 units
FDC6310P