Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC634P, MOSFET

September 2001

2001 Fairchild Semiconductor Corporation FDC634P Rev E (W)

FDC634P

P-Channel 2.5V Specified PowerTrench



MOSFET

General Description

This P-Channel 2.5V specified MOSFET uses

Fairchild’s low voltage PowerTrench process. It has

been optimized for battery power management

applications.

Applications

• Battery management

• Load switch

• Battery protection

Features

• –3.5 A, –20 V. R

DS(ON)

= 80 mΩ @ V

= –4.5 V

DS(ON)

= 110 mΩ @ V

= –2.5 V

• Low gate charge (7.2 nC typical)

• High performance trench technology for extremely

low R

DS(ON)

SuperSOT -6

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –20 V

GSS

Gate-Source Voltage

±8

Drain Current – Continuous (Note 1a) –3.5 A

– Pulsed –20

Maximum Power Dissipation (Note 1a) 1.6 W P

(Note 1b)

0.8

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 30

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.634 FDC634P 7’’ 8mm 3000 units

FDC634P

Summary of content (5 pages)

PAGE 1
FDC634P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –3.5 A, –20 V. RDS(ON) = 80 mΩ @ V GS = –4.5 V RDS(ON) = 110 mΩ @ V GS = –2.5 V Applications • High performance trench technology for extremely low RDS(ON) • Low gate charge (7.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –12 mV/°C Off Characteristics BV DSS Drain–Source Breakdown Voltage V GS = 0 V, ID = –250 µA ∆BV DSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C V DS = –16 V, V GS = 0 V –1 IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 µA nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V V DS = 0 V –100 nA On Characteristics –20
PAGE 3
FDC634P Typical Characteristics 15 2 V GS = -4.5V -3.0V -3.5V -ID, DRAIN CURRENT (A) 12 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -2.5V V 9 -2.0V 6 3 -1.5V V GS=-2.0V 1.8 1.6 -2.5V 1.4 -3.0V 1.2 -3.5V -4.5V 1 0.8 0 0 1 2 3 0 4 3 6 Figure 1. On-Region Characteristics. 15 0.22 ID = -1.8A ID = -3.5A V GS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 1.
PAGE 4
FDC634P Typical Characteristics 1000 ID = -3.5A V DS = -5V -10V 800 -15V 3 2 1 600 400 COSS 200 0 CRSS 0 0 1 2 3 4 5 6 7 8 9 0 5 Q g, GATE CHARGE (nC) 20 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 10 100µ s 1ms 10ms 100ms 1 1s DC V GS = -10V SINGLE PULSE RθJA = 156 o C/W 0.1 T A = 2 5oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 156°C/W TA = 25°C 8 6 4 2 0 0.01 0.1 1 10 100 t 1, TIME (sec) -V D S, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area.
PAGE 5
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