Datasheet
FDC637AN
FDC637AN, Rev. C
FDC637AN
Single N-Channel, 2.5V Specified PowerTrench
TM
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
Applications
• DC/DC converter
• Load switch
• Battery Protection
November 1999
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol Parameter FDC637AN Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
±
8
V
I
D
Drain Current - Continuous
(Note 1a)
6.2 A
Drain Current - Pulsed 20
P
D
Power Dissipation for Single Operation
(Note 1a)
1.6 W
(Note 1b)
0.8
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°
C/W
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.637 FDC637AN 7’’ 8mm 3000 units
Features
• 6.2 A, 20 V. R
DS(on)
= 0.024 Ω @ V
GS
= 4.5 V
R
DS(on)
= 0.032 Ω @ V
GS
= 2.5 V
• Fast switching speed.
• Low gate charge (10.5nC typical).
• High performance trench technology for extremely
low R
DS(ON)
.
• SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
5
6
4
1
2
3
D
D
D
S
D
G
SuperSOT -6
TM