Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC638P, MOSFET

September 2001

2001 Fairchild Semiconductor Corporation FDC638P Rev F1 (W)

FDC638P

P-Channel 2.5V PowerTrench



Specified MOSFET

General Description

This P-Channel 2.5V specified MOSFET is produced

using Fairchild Semiconductor’s advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance

These devices are well suited for battery power

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

Features

• –4.5 A, –20 V. R

DS(ON)

= 48 mΩ @ V

= –4.5 V

DS(ON)

= 65 mΩ @ V

= –2.5 V

• Low gate charge (10 nC typical)

• High performance trench technology for extremely

low R

DS(ON)

• SuperSOT ™ –6 package: small footprint (72%

smaller than standard SO-8; low profile (1mm thick)

SuperSOT -6

pin 1

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –20 V

GSS

Gate-Source Voltage ±8 V

Drain Current – Continuous (Note 1a) –4.5 A

– Pulsed –20

Power Dissipation for Single Operation (Note 1a) 1.6 P

(Note 1b)

0.8

, T

STG

Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 30

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.638 FDC638P 7’’ 8mm 3000 units

FDC638P

Summary of content (5 pages)

PAGE 1
FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance • –4.5 A, –20 V. RDS(ON) = 48 mΩ @ V GS = –4.5 V RDS(ON) = 65 mΩ @ V GS = –2.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –16 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V, V DS = 0 V –100 nA –1.
PAGE 3
FDC638P Typical Characteristics 20 1.6 V GS = -4.5V -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) -3.0V 15 -2.0V 10 5 0 0 1 2 3 1.4 1.2 -3.0V -3.5V -4.0V 0.8 4 0 Figure 1. On-Region Characteristics. 5 10 -ID , DRAIN CURRENT (A) 15 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.15 ID = -4.5A V GS = -4.5V RDS(ON), ON-RESISTANCE (OHM) ID = -2.2A 1.4 1.2 1 0.8 0.6 0.12 0.09 TA = 125o C 0.06 T A = 25o C 0.
PAGE 4
FDC638P Typical Characteristics 1500 V DS = -5V ID = -4.5A -10V 4 3 2 1 f = 1 MHz VGS = 0 V CISS 1200 -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 900 600 C OSS 300 0 CRSS 0 3 6 9 12 0 0 Qg, GATE CHARGE (nC) 5 10 15 20 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 -ID, DRAIN CURRENT (A) RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100 1ms 10ms 10 100ms 1s 1 10s DC V GS = -4.
PAGE 5
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