Datasheet

April 2002
2002 Fairchild Semiconductor Corporation
FDC6392S Rev C(W)
FDC6392S
20V Integrated P-Channel PowerTrench



MOSFET and Schottky Diode
General Description
The FDC6392S combines the exceptional performance
of Fairchild's PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in an SSOT-6 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
MOSFET:
• –2.2 A, –20V. R
DS(ON)
= 150 mΩ @ V
GS
= –4.5V
R
DS(ON)
= 200 mΩ @ V
GS
= –2.5V
• Low Gate Charge (3.7nC typ)
• Compact industry standard SuperSOT

-6 package
Schottky:
• V
F
< 0.45 V @ 1 A
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
Pin 1
SuperSOT™-6
3
2
1
4
5
6
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
MOSFET Drain-Source Voltage –20 V
V
GSS
MOSFET Gate-Source Voltage
±12
V
I
D
Drain Current – Continuous (Note 1a) –2.2 A
– Pulsed –6
Power Dissipation for Single Operation (Note 1a) 0.96
W
(Note 1b)
0.9
P
D
(Note 1c)
0.7
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
V
RRM
Schottky Repetitive Peak Reverse Voltage 20 V
I
O
Schottky Average Forward Current (Note 1a) 1 A
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 130
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 60
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.392 FDC6392S 7’’ 8mm 3000 units
FDC6392S