Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC6401N, MOSFET

October 2001

2001 Fairchild Semiconductor Corporation

FDC6401N Rev C (W)

FDC6401N

Dual N-Channel 2.5V Specified PowerTrench



MOSFET

General Description

This Dual N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R

DS(ON)

and fast switching speed.

Applications

• DC/DC converter

• Battery Protection

• Power Management

Features

• 3.0 A, 20 V. R

DS(ON)

= 70 mΩ @ V

= 4.5 V

DS(ON)

= 95 mΩ @ V

= 2.5 V

• Low gate charge (3.3 nC)

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SuperSOT -6

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 20 V

GSS

Gate-Source Voltage

±12

Drain Current – Continuous (Note 1a) 3.0 A

– Pulsed 12

Power Dissipation for Single Operation (Note 1a) 0.96

(Note 1b)

0.9

(Note 1c)

0.7

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 130

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 60

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.401 FDC6401N 7’’ 8mm 3000 units

FDC6401N

Summary of content (5 pages)

PAGE 1
FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 3.0 A, 20 V. • Low gate charge (3.3 nC) Applications • High performance trench technology for extremely RDS(ON) = 70 mΩ @ VGS = 4.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V 100 nA ID = 250 µA 1.
PAGE 3
FDC6401N Typical Characteristics 2 12 3.0V 2.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5V 10 3.5V 8 2.0V 6 4 2 0 0 1 2 VGS = 2.0V 1.8 1.6 1.4 2.5V 1.2 3.0V 4.5V 0.8 3 0 2 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 8 10 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.22 ID = 3.0A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 ID, DIRAIN CURRENT (A) Figure 1.
PAGE 4
FDC6401N Typical Characteristics 450 ID = 3A VDS = 5V f = 1 MHz VGS = 0 V 10V 4 360 15V CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 5 3 2 CISS 270 180 COSS 1 90 0 0 CRSS 0 1 2 3 4 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) RDS(ON) LIMIT 100µs 10 1ms 10ms 100ms 1s DC VGS = 4.5V SINGLE PULSE RθJA = 180oC/W 0.1 o TA = 25 C 0.01 0.
PAGE 5
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