Datasheet

September 2001
2001 Fairchild Semiconductor Corporation
FDC6420C Rev C(W)
FDC6420C
20V N & P-Channel PowerTrench

MOSFETs
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
• DC/DC converter
• Load switch
• LCD display inverter
Features
• Q1 3.0 A, 20V. R
DS(ON)
= 70 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 95 mΩ @ V
GS
= 2.5 V
• Q2 –2.2 A, 20V. R
DS(ON)
= 125 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 190 mΩ @ V
GS
= –2.5 V
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
.
• SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
Pin 1
SuperSOT™-6
3
2
1
4
5
6
Q1(N)
Q2(P)
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Q1 Q2 Units
V
DSS
Drain-Source Voltage 20 –20 V
V
GSS
Gate-Source Voltage
±12 ±12
V
I
D
Drain Current – Continuous (Note 1a) 3.0 –2.2 A
– Pulsed 12 –6
Power Dissipation for Single Operation (Note 1a) 0.96
(Note 1b)
0.9
P
D
(Note 1c)
0.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 130
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 60
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.420 FDC6420C 7’’ 8mm 3000 units
FDC6420C