Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC642P, MOSFET

January 2010

FDC642P Rev.C2

www.fairchildsemi.com

FDC642P Single P-Channel 2.5V Specified PowerTrench

MOSFET

FDC642P

Single P-Channel 2.5V Specified PowerTrench

MOSFET

-20 V, -4.0 A, 65 mΩ

Features

 Max r

DS(on)

= 65 mΩ at V

= -4.5 V, I

= -4.0 A

 Max r

DS(on)

= 100 mΩ at V

= -2.5 V, I

= -3.2 A

 Fast switching speed

 Low gate charge (11nC typical)

 High performance trench technology for extremely low r

DS(on)

 SuperSOT

-6 package: small footprint (72% smaller than

standard SO-8); low profile (1 mm thick)

 Termination is Lead-free and RoHS Compliant

General Description

This P-Channel 2.5V specified MOSFET is produced using

Fairchild’s advanced Power

Trench

process that has been

especially tailored to minimize on-state resistance and yet

maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power

dissipation in a very small footprint for applications where the

larger packages are impractical.

Applications

 Load switch

 Battery protection

 Power management

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage -20 V

Gate to Source Voltage ±8 V

-Continuous T

= 25°C (Note 1a) -4.0

-Pulsed -20

Power Dissipation ( Note 1a) 1.6

Power Dissipation (Note 1b) 0.8

, T

STG

Operating and Storage Junction Temperature Range -55 to + 150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78 °C/W

Device Marking Device Package Reel Size Tape Width Quantity

.642 FDC642P SSOT-6

7 ’’ 8 mm 3000 units

Summary of content (5 pages)

PAGE 1
FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -4.0 A, 65 mΩ Features General Description Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A This P-Channel 2.5V specified MOSFET is produced using Fairchild’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 µA -1.
PAGE 3
-ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -3.5 V 16 VGS = -2.0 V VGS = -3.0 V VGS = -2.5 V 12 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 8 VGS = -1.5 V 4 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 4 VGS = -1.5 V 3 VGS = -2.0 V 2 1 VGS = -3.0 V VGS = -3.5 V 0 0 1 2 3 4 VGS = -2.5 V 0 5 0 4 Figure 1. On Region Characteristics 180 rDS(on), DRAIN TO ID = -4.0 A VGS = -4.5 V 1.2 1.0 0.8 0.
PAGE 4
2000 ID = -4.0 A 4.0 Ciss 1000 3.5 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -5 V 2.5 VDD = -10 V 2.0 VDD = -15 V 1.5 Coss 100 Crss 1.0 f = 1 MHz VGS = 0 V 0.5 0.0 0 3 6 9 10 0.1 12 1 Figure7. Gate Charge Characteristics 20 Figure 8.
PAGE 5
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.