Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC645N, MOSFET

April 2001

2000 Fairchild Semiconductor Corporation

FDC645N Rev C(W)

FDC645N

N-Channel PowerTrench







MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R

DS(ON)

and fast switching speed.

Applications

• DC/DC converter

Features

• 5.5 A, 30 V. R

DS(ON)

= 30 mΩ @ V

= 4.5 V

DS(ON)

= 26 mΩ @ V

= 10 V

• High performance trench technology for extremely

low R

DS(ON)

• Low gate charge (13 nC typical)

• High power and current handling capability

SuperSOT -6

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

±12

Drain Current – Continuous (Note 1a) 5.5 A

– Pulsed 20

Maximum Power Dissipation (Note 1a) 1.6 W P

(Note 1b)

0.8

, T

STG

Operating and Storage Junction Temperature Range -55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 78

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 30

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.645 FDC645N 7’’ 8mm 3000 units

FDC645N

Summary of content (5 pages)

PAGE 1
FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 5.5 A, 30 V. RDS(ON) = 30 mΩ @ VGS = 4.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = 250 µA 30 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA 2 V On Characteristics ID = 250 µA, Referenced to 25°C 22 mV/°C (Note
PAGE 3
FDC645N Typical Characteristics 1.4 20 ID, DRAIN CURRENT (A) 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 3.5V 15 3.0V 2.5V 10 5 2.0V 0.5 3.5V 4.0V 4.5V 1 5.0V 10V 1 1.5 0 2 5 10 15 20 25 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 1.6 ID = 5.5A VGS = 4.5V ID = 3.
PAGE 4
FDC645N Typical Characteristics 2400 ID = 5.5A f = 1MHz VGS = 0 V 10V VDS = 5V 2000 8 15 V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 1600 CISS 1200 800 400 COSS 0 0 5 10 15 20 25 0 30 5 Qg, GATE CHARGE (nC) 15 20 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 5 RDS(ON) LIMIT 100µs 1ms 10 10ms 100ms 1s 10s 1 DC VGS = 4.5V SINGLE PULSE RθJA = 156oC/W 0.1 TA = 25oC 0.01 SINGLE PULSE RθJA = 156°C/W TA = 25°C 4 3 2 1 0 0.
PAGE 5
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