Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC653N, MOSFET

November 1997

FDC653N

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

Absolute Maximum Ratings T

= 25°C unless otherwise note

Symbol Parameter FDC653N Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage - Continuous ±20 V

Drain Current - Continuous (Note 1a) 5 A

- Pulsed 15

Maximum Power Dissipation (Note 1a) 1.6 W

(Note 1b)

0.8

STG

Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W

FDC653N Rev.C

This N-Channel enhancement mode power field effect

transistors is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

tailored to minimize on-state resistance. These devices are

particularly suited for low voltage applications in notebook

computers, portable phones, PCMICA cards, and other

battery powered circuits where fast switching, and low in-line

power loss are needed in a very small outline surface mount

package.

5 A, 30 V. R

DS(ON)

= 0.035 Ω @ V

= 10 V

DS(ON)

= 0.055 Ω @ V

= 4.5 V.

Proprietary SuperSOT

-6 package design using copper

lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R

DS(ON)

Exceptional on-resistance and maximum DC current

capability.

SOIC-16

SOT-23

SuperSOT

-8

SO-8

SOT-223

SuperSOT

-6

SuperSOT -6

.653

Summary of content (5 pages)

PAGE 1
November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance.
PAGE 2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp.
PAGE 3
Typical Electrical Characteristics VGS = 10V 3.5 6.0 R DS(ON) , NORMALIZED 5.0 4.5 12 4.0 9 3.5 6 3 0 3.0 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 15 2.5 4.0 2 0.5 1 1.5 4.5 5.0 1.5 6.0 10 1 0.5 0 VGS =3.5V 3 2 0 3 6 9 I D , DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) 1.8 0.18 1.6 R DS(ON) , ON-RESISTANCE (OHM) I D = 5.0A V GS = 10V 1.4 1.2 1 0.8 0.6 -50 I D =2A 0.15 0.12 0.09 TA = 125°C 0.06 TA = 25°C 0.
PAGE 4
Typical Electrical And Thermal Characteristics 1000 ID = 5.0A V DS = 5V 8 10V 15V 6 500 CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 10 4 Ciss Coss 200 100 2 0 0 2 4 6 8 10 12 50 0.1 14 0.3 Q g , GATE CHARGE (nC) V DS 30 S( IT 100 10 30 us POWER (W) 1s DC 0.3 VGS = 10V SINGLE PULSE RθJA = See Note 1b TA = 25°C 0.01 0.1 0.2 0.5 SINGLE PULSE RθJA =See note 1b TA = 25°C 4 1m s 10m s 100 ms 3 2 1 1 2 5 10 30 0 0.01 50 0.
PAGE 5
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