Datasheet

May 2003
2003 Fairchild Semiconductor Corporation
FDC654P Rev E1 (W)
FDC654P
Single P-Channel Logic Level PowerTrench

MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –3.6 A, –30 V. R
DS(ON)
= 75 mΩ @ V
GS
= –10 V
R
DS(ON)
= 125 mΩ @ V
GS
= –4.5 V
• Low gate charge (6.2 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –30 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous (Note 1a) –3.6 A
– Pulsed –10
Maximum Power Dissipation (Note 1a) 1.6 W P
D
(Note 1b)
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 30
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.654 FDC654P 7’’ 8mm 3000 units
FDC654P